Study of factors effecting growth rate and grain density of rubrene deposited on different substrates using hot wall epitaxy

Abstract

Rubrene is a promising hydrocarbon for organic thin film transistors due to its remarkable carrier transport capabilities in the active semiconducting layer. Room temperature hole mobilities for single crystals have been high and are the reason for increased attention towards this material.

In our work here we report on the thin films of rubrene deposited on two dielectric materials, SiO₂ and mica which resulted in nominal film thicknesses starting from sub monolayer. A study of island growth dependence on substrate temperatures has also been conducted. In order to understand the molecular growth dynamics of rubrene thin films on these two substrates, we made use of Atomic Force Microscopy for the characterization of these films and studied the pattern of island growth dependence on different substrate temperatures and substrates.