Study Of Island Height Distribution For Rubrene Thin Films Deposited At Different Substrate Temperatures Using Hot Wall Epitaxy

Abstract

Inorganic thin film transistors, the hydrocarbon rubrene, due to its remarkable carrier transport capabilities, has been a constant source of research and has attracted much attention. Here we have conducted a study based on the preparation and analysis of thin film deposition of rubrene on two dielectric materials, SiO₂ and mica, resulting in island formation and growth. A study of island growth dependence on substrate temperatures has also been conducted. To analyze the dynamics of molecular growth of rubrene films on these substrates, we used atomic force microscopy to characterize them and studied the pattern of island growth on different substrate temperatures and substrates.